| PART |
Description |
Maker |
| HY62256A HY62256AJ HY62256AJ-I HY62256ALJ HY62256A |
32Kx8bit CMOS SRAM, standby current=25uA, 70ns
32Kx8bit CMOS SRAM, standby current=25uA, 55ns
32Kx8bit CMOS SRAM, standby current=25uA, 85ns
32Kx8bit CMOS SRAM, standby current=100uA, 70ns
32Kx8bit CMOS SRAM, standby current=100uA, 85ns
32Kx8bit CMOS SRAM, standby current=1mA, 70ns
32Kx8bit CMOS SRAM, standby current=1mA, 85ns
32Kx8bit CMOS SRAM, standby current=1mA, 55ns
32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM
Circular Connector; No. of Contacts:22; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 32Kx8bit CMOS SRAM
JT 22C 22#22D SKT RECP
32Kx8bit CMOS SRAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
ETC
HYNIX[Hynix Semiconductor]
http://
|
| KM48C8104B KM48C8004B KM48C8004BK-6 KM48C8004BS-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| K4E170811D K4E170812D K4E160811D K4E160812D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out
|
SAMSUNG[Samsung semiconductor]
|
| WS62256LLFP WS62256LLP WS62256 |
Very Low Power / Voltage CMOS SRAM 32K X 8bit
|
WINGS[Wing Shing Computer Components]
|
| WS62256LLP WS62256LLFP |
Very Low Power / Voltage CMOS SRAM 32K X 8bit
|
Wing Shing Computer Com...
WINGS[Wing Shing Computer Components]
|
| SST29LE010-150-4C-NHE CAT25C33Y20 GLS29EE512-70-4I |
EEPROM 128K X 8 150ns
EEPROM (4kx8) 32K 2.5-6.0
EEPROM 64K X 8 70ns
EEPROM 128K X 8 70ns
16Kb Add-Only Memory 16K X 1 OTPROM, PDSO6
|
Silicon Storage Technology, Inc.
Advanced Semiconductor, Inc.
Maxim Integrated Products
|
| K4F640812D K4F660812D K4F640812D-JCL |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| AT49BV002A-70VI AT49BV002AT-70JI AT49BV002AT-70JU |
70NS, VSOP, IND TEMP(FLASH) 256K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
70NS, PLCC, IND TEMP(FLASH) 256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
70NS, PLCC, IND TEMP, GREEN(FLASH) 256K X 8 FLASH 2.7V PROM, 70 ns, PQCC32
70NS, TSOP, IND TEMP(FLASH) 256K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
70NS, VSOP, IND TEMP, ROHS-A(FLASH)
|
Atmel, Corp.
ATMEL CORP
|
| KM48C512D |
High Speed 512K x 8Bit CMOS Dynamic RAM with with Fast Page Mode(高12K x 8CMOS 动态RAM(带快速页模式))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6F4008S2DFAMILY |
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
